View DRF1401_1233781.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UHF POWER TRANSISTOR
DRF1401
NPN SiGe RF TRANSISTOR
The DRF1401 is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.
FEATURES
o 4.8 Volt operation o P1dB 28 dBm @f=900MHz o Power gain 8.5 dB @f=900MHz PIN CONFIGURATION
APPLICATIONS
o Hand-held radio equipment in common emitter class-AB operation in 900 MHz communication band.
PIN NO 1 2 3 4
SYMBOL E B E C
DESCRIPTION emitter base emitter collector
MAXIMUM RATINGS
SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 150 Unit V V V mA W
www.tachyonics.co.kr
- 1/7 -
Sep-03-2002 2nd Edition
UHF POWER TRANSISTOR
DRF1401
THERMAL CHARACTERISTICS
SYMBOL Rth j-s PARAMETER
thermal resistance from junction to soldering point
CONDITION PT=1W; Ts=60 ;note1
VALUE 55
Unit K/W
* Note 1. Ts is temperature at the soldering point of the collector pin.
QUICK REFERENCE DATA
RF performance at Ts 60 Mode of Operation CW, class-AB in common emitter test circuit (see Fig 8.) VCE [V] 4.8 PL [mW] 600 GP [dB] 7 [%]
f [MHz] 900
C
www.tachyonics.co.kr
- 2/7 -
Sep-03-2002 2nd Edition
UHF POWER TRANSISTOR
DRF1401
DC CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER
collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance
SYMBOL BVCBO BVCEO BVEBO IS hFE CCB
CONDITION
open emitte open base open collector
MIN. 20 8 3 0.1 60
MAX.
UNIT V V V mA
4.5
pF
160 Hfe 140 120 100 80 60 40 20
6
5
4
3
2
0 0.00
0
0.10 0.20 0.30 0.40 Ic(A) 0.50
2
4
6
8
10
Fig 1. DC Current gain v.s Collector current
Fig 2. Collector-base capacitance v.s Collectorbase voltage(DC)
www.tachyonics.co.kr
- 3/7 -
Sep-03-2002 2nd Edition
UHF POWER TRANSISTOR
DRF1401
APPLICATION INFORMATION (I)
RF performance at Ts 60 Mode of Operation CW, class-AB
10
in common emitter test circuit (see Fig 7) VCE [V] 4.8
100 30 26 22
f [MHz] 900
PL [mW] 600
GP [dB] 7
C
[%]
C [%]
8 80
6
60
18 14 10
4
40
2
20
6 2 0 4 8 12 16 20 24
0 8 12 17 21 25 28 30
0
Fig 3. Power gain and collector efficiency v.s load power (typical value)
Fig 4. Load power v.s input power (typical value)
Typical Large Signal Impedance
VCE = 4.8V, ICQ = 5mA, Pout = 28dBm source 800 820 840 860 880 900 920 940 960 980 1000 Mag 0.615 0.631 0.65 0.666 0.682 0.698 0.711 0.724 0.735 0.746 0.760 Ang -162.5 -164.0 -165.9 -167.6 -169.5 -171.2 -172.7 -174.5 -175.9 -177.6 -179.3 Mag 0.460 0.478 0.494 0.509 0.524 0.538 0.550 0.563 0.578 0.593 0.600 load Ang 161.4 159.6 158.0 156.2 154.0 151.9 150.0 147.3 145.0 142.8 140.3
Sep-03-2002 2nd Edition
www.tachyonics.co.kr
- 4/7 -
UHF POWER TRANSISTOR
DRF1401
APPLICATION INFORMATION (II)
RF performance at Ts 60 Mode of Operation CW, class-AB in common emitter configuration. (ICQ = 5mA) VCE [V] 4.8 PL [mW] 630 GP [dB] 14
C
f [MHz] 450
[%]
DRF1401 Input/Load Impedance as a frequency Freq. [MHz] 400 450 500 550 600 rin 8.35 7.38 6.80 6.74 7.03 Zin xin -3.34 -7.19 -11.03 -14.89 -18.92 RL 23.32 20.24 18.27 17.30 17.05 ZL ZL 4.19 9.95 16.37 23.65 32.08
Transister Impedance
ZL
Zin
20 Zin 15 [] 10 5 0
35
rin
ZL 30 [] 25 20 15
RL
-5 -10 -15 -20 350 450
xin
10 5 0 350
XL
550
650 Freq [MHz]
450
550
650 Freq [MHz]
Fig 5. Input Impedance (series components) as a freq, typical values.
Fig 6. Load Impedance (series components) as a freq, typical values.
www.tachyonics.co.kr
- 5/7 -
Sep-03-2002 2nd Edition
UHF POWER TRANSISTOR
DRF1401
Part List C1, C11 C2, C10 C3, C4, C8, C9 C5
DRF1401
100nF 1nF 100pF 6pF 4pF 2.2 10 50nH
C7 R1 R2, R3 L1, L2
Fig 7. Test Circuit Board Layout @ f = 900MHz
Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 900 MHz.
90 ,
/4 @900 MHz
90 ,
/4 @900 MHz
DRF1401
Fig 8. Test Circuit Schematic Diagram @f = 900MHz
Sep-03-2002 2nd Edition
www.tachyonics.co.kr
- 6/7 -
UHF POWER TRANSISTOR
DRF1401
PACKAGE DIMENSION
Fig 9. SOT-223 Package dimension
www.tachyonics.co.kr
- 7/7 -
Sep-03-2002 2nd Edition

▲Up To Search▲

Price & Availability of DRF1401

	To Download DRF1401 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .